MONOLITHICALLY INTEGRATED NANOWIRE LASERS - III-V-LASERS ON SILICON

MONOLITHICALLY INTEGRATED NANOWIRE LASERS - III-V-LASERS ON SILICON

CHALLENGE

The fusion of nano-optics and silicon based computer chips is expected to be a game changer in both, telecommunications and computer design. The main obstacle is that telecom optics are based on III-V-semiconductors, e.g. GaAs, while logical computer chips are based on silicon and manufactured along the CMOS process route. The direct epitaxy of III-V materials on Si substrates introduces threa- ding dislocations that have prevented lasing operation of commercial devices on Si to date.

INNOVATION

Here we offer a technology that allows formation of III-V-material vertical nanowire lasers grown direc- tly on a silicon wafer as a substrate. This opens the door to CMOS-conform production of telecom-la- sers as well as new logical chip architectures.

COMMERCIAL OPPORTUNITIES

  • networks
  • datacenter
  • light source for projectors ...

DEVELOPMENT STATUS

Prototype running

Figure: A III-V semiconductor Nanowire Laser laser cavity monolithically integrated onto a silicon microchip (left).

Nanowire lasers can be designed with high emission efficiencies (β=0.3).

REFERENCES

(1) T. STETTNER ET AL., APPL. PHYS. LETT. 108, 011108 (2016), „COAXIAL GAAS-ALGAAS CORE-MULTISHELL NANOWIRE LASERS

WITH EPITAXIAL GAIN“

(2) WO 2017/046138

Dr. Roland Schanz
E-Mail:
Phone:
Reference Number:
rschanz@baypat.de
+49 (0) 89 5480177 - 17
B75073