SnIP: A NEW SEMICONDUCTOR

SnIP: A NEW SEMICONDUCTOR

 CHALLENGE

The new substance tin phosphor iodide (SnIP) consists of the elements tin (Sn), iodine (I) and phosphorus (P). This new substance is expected to appear in at least two chapters of future standard teaching books. This is the first inorganic material with a double-helical structure as well as a new semiconductor material. This second aspect in particular opens many interes- ting technical possibilities.

INNOVATION

SnIP and its analagues represent a new, exotic material with an unusual combination of in- teresting features:

  • Semiconductor with a bandgap in the range of 1.8eV
  • Photoluminescence (λmax = 670nm)
  • Nanowires with a diameters of ~ 5 nm and lengths over centimeters
  • Thermal stability up to 500 ° C
  • Non-toxic

With these features and low-cost synthesis, outstanding application possibilities in the field of photovoltaics and in the LED sector can be expected. However, similar to graphene, it is to be expected that various other unconventional applications will be discovered. For example, it is conceivable to use the flexible nanowires for the contact-connection of semiconductor structures.

COMMERCIAL OPPORTUNITIES

  • Sensor
  • Solar
  • Light source

DEVELOPMENT STATUS

Basic experiments successful.

Figure: Room temperature photoluminescence measurement on a SnIP needle featuring a minimum recombination energy of 1.86 eV (left). New double helix structure SnIP with a phosphor-axis (red) wrapped with an alternating tin iodine (green, purple) chain (right).

REFERENCES

(1) DOI: 10.1002/ADMA.201603135

Dr. Roland Schanz
E-Mail:
Phone:
Reference Number:
rschanz@baypat.de
+49 (0) 89 5480177 - 17
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